DocumentCode :
436756
Title :
Radiation-induced back channel leakage in 60 MeV-proton-irradiated 0.10 /spl mu/m-CMOS partially depleted SOI MOSFETs
Author :
Rafi, J.M. ; Mercha, A. ; Simoen, E. ; Claeys, C. ; Mohammadzadeh, Ali
fYear :
2003
fDate :
15-19 Sept. 2003
Firstpage :
425
Lastpage :
432
Keywords :
Degradation; Geometry; Leakage current; MOSFETs; Protons; Semiconductor films; Silicon on insulator technology; Space technology; Switches; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2003. RADECS 2003. Proceedings of the 7th European Conference on
Conference_Location :
Noordwijk, The Netherlands
ISSN :
0379-6566
Print_ISBN :
92-9092-846-8
Type :
conf
Filename :
1442497
Link To Document :
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