DocumentCode :
436758
Title :
Buildup and annealing of interface traps under the influence of low-dose rate space irradiation taking into account high-frequency gate bias switches
Author :
Zebrev, G.I. ; Pershenkov, V.S. ; Shvetzov-Shilovsky, I.N. ; Morozov, I.S. ; Ulimov, V.N. ; Emeliano, A.V.
fYear :
2003
fDate :
15-19 Sept. 2003
Firstpage :
439
Lastpage :
441
Keywords :
Annealing; Delay; Equations; Frequency; Instruments; MOSFET circuits; Physics; Space missions; Switches; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2003. RADECS 2003. Proceedings of the 7th European Conference on
Conference_Location :
Noordwijk, The Netherlands
ISSN :
0379-6566
Print_ISBN :
92-9092-846-8
Type :
conf
Filename :
1442500
Link To Document :
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