DocumentCode :
436762
Title :
Temperature effects and long term fading of implanted and un-implanted gate oxide RADFETs
Author :
Haran, Avner ; Jaksic, Aleksandar ; Refach, N. ; Eliyahu, Avraham ; David, David ; Bar, Joseph
fYear :
2003
fDate :
15-19 Sept. 2003
Firstpage :
465
Lastpage :
469
Keywords :
Annealing; Fading; Fluctuations; Information retrieval; MOSFETs; Semiconductor device measurement; Temperature dependence; Temperature distribution; Temperature sensors; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2003. RADECS 2003. Proceedings of the 7th European Conference on
Conference_Location :
Noordwijk, The Netherlands
ISSN :
0379-6566
Print_ISBN :
92-9092-846-8
Type :
conf
Filename :
1442509
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=436762
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