DocumentCode :
436789
Title :
MeV neutron-induced SEU in SRAM devices
Author :
Flament, O. ; Baggio, J. ; Hose, C.D. ; Gasiot, G. ; Leray, J.L.
fYear :
2003
fDate :
15-19 Sept. 2003
Firstpage :
649
Lastpage :
652
Keywords :
Analytical models; CMOS technology; Life estimation; Manufacturing; Neutrons; Power measurement; Power supplies; Random access memory; Single event upset; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2003. RADECS 2003. Proceedings of the 7th European Conference on
Conference_Location :
Noordwijk, The Netherlands
ISSN :
0379-6566
Print_ISBN :
92-9092-846-8
Type :
conf
Filename :
1442565
Link To Document :
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