Title :
Selective growth of self-assembled InAs quantum dots with the in-situ mask
Author :
Nakamura, Y. ; Ohkouchi, S. ; Nakamura, H. ; Asakawa, K.
Author_Institution :
The Femtosecond Technol. Res. Assoc., Tsukuba, Japan
fDate :
31 May-4 June 2004
Abstract :
We have selectively grown high-quality self-assembled InAs quantum dots (QDs) in required regions by using in-situ mask, where perfect selectivity has been demonstrated. The grown QDs showed high density of 3×1010 cm-2 and high optical quality, namely, a photoluminescence peak was 1.3 μm and the linewidth was 30 meV at room temperature. These high-quality QDs are applicable to very small optical switches for high-speed optical communications.
Keywords :
III-V semiconductors; indium compounds; masks; photoluminescence; semiconductor growth; semiconductor quantum dots; spectral line breadth; 1.3 mum; 30 meV; InAs; high-speed optical communications; in-situ mask; optical switches; photoluminescence; selective growth; self-assembled quantum dots; Gallium arsenide; High speed optical techniques; Molecular beam epitaxial growth; Nonlinear optics; Optical buffering; Optical switches; Photoluminescence; Quantum dots; US Department of Transportation; Ultrafast optics;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442756
