DocumentCode
436823
Title
Arrayed waveguides with linearly varying refractive index distribution and its application for wavelength demultiplexer
Author
Kawakita, Yasumasa ; Saitoh, Takayoshi ; Kawai, Akira ; Shimotaya, Suguru ; Shimomura, Kazuhiko
Author_Institution
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan
fYear
2004
fDate
31 May-4 June 2004
Firstpage
484
Lastpage
487
Abstract
Arrayed waveguides using GalnAs/InP MQW with linearly varying refractive index distribution were fabricated by selective MOVPE. We investigated the waveguide structure dependence on growth condition and mask geometry, and demonstrated the successful wavelength demultiplexing.
Keywords
III-V semiconductors; MOCVD; demultiplexing equipment; gallium arsenide; gallium compounds; indium compounds; optical arrays; optical design techniques; optical fabrication; optical waveguides; refractive index; semiconductor quantum wells; vapour phase epitaxial growth; wavelength division multiplexing; GaInAs-InP; MOVPE; arrayed waveguides; mask geometry; refractive index distribution; wavelength demultiplexer; Arrayed waveguide gratings; Diffraction; Epitaxial growth; Geometry; Optical arrays; Optical coupling; Optical device fabrication; Phased arrays; Quantum well devices; Refractive index;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8595-0
Type
conf
DOI
10.1109/ICIPRM.2004.1442763
Filename
1442763
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