Title :
Quick assessment of homogeneity in large-diameter InP substrate by mapping near-infrared transmittance
Author :
Shiomi, Ryo ; Kawase, Toshihiro ; Yamada, Masayoshi
Author_Institution :
Dept. of Electron. & Information Sci., Kyoto Inst. of Technol., Japan
fDate :
31 May-4 June 2004
Abstract :
A quick imaging technique of near-infrared transmittance has been developed to assess both macroscopic and microscopic homogeneities in VCZ-grown S-doped InP substrates with the large diameters up to 4 inches. In addition to homogeneity assessment of substrates with various diameters, an asymmetric pattern, reflecting the asymmetric shape of solid-liquid interface, as well as a steep striation pattern due to fluctuation of growth speed are observe in a large diameter substrate.
Keywords :
III-V semiconductors; crystal growth from melt; indium compounds; infrared spectra; semiconductor growth; substrates; sulphur; InP:S; VCZ; homogeneity; near-infrared transmittance; quick imaging technique; solid-liquid interface; striation pattern; Absorption; Detectors; High-resolution imaging; Indium phosphide; Iron; Optical devices; Optical imaging; Optical scattering; Spatial resolution; Wavelength measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442796
