DocumentCode
436827
Title
Simplified nonplanar wafer bonding for heterogeneous device integration
Author
Geske, Jon ; Bowers, John E. ; Riley, Anton
Author_Institution
Dept. of Electr. & Comput. Eng.,, Univ. of California, Santa Barbara, CA, USA
fYear
2004
fDate
31 May-4 June 2004
Firstpage
603
Lastpage
605
Abstract
We demonstrate a new, simplified nonplanar wafer bonding technique for heterogeneous device integration. The improved technique can be used to laterally integrate dissimilar semiconductor device structures on a lattice mismatched substrate. Using the technique two InP based VCSEL active regions have been integrated onto GaAs without compromising the quality of the photoluminescence. Experimental and numerical simulation results are presented.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; laser cavity resonators; photoluminescence; surface emitting lasers; wafer bonding; GaAs; InP; VCSEL; heterogeneous device integration; lattice mismatched substrate; nonplanar wafer bonding; photoluminescence; Fixtures; Gallium arsenide; Indium phosphide; Lattices; Numerical simulation; Photonics; Semiconductor devices; Substrates; Vertical cavity surface emitting lasers; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8595-0
Type
conf
DOI
10.1109/ICIPRM.2004.1442797
Filename
1442797
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