Title :
Simplified nonplanar wafer bonding for heterogeneous device integration
Author :
Geske, Jon ; Bowers, John E. ; Riley, Anton
Author_Institution :
Dept. of Electr. & Comput. Eng.,, Univ. of California, Santa Barbara, CA, USA
fDate :
31 May-4 June 2004
Abstract :
We demonstrate a new, simplified nonplanar wafer bonding technique for heterogeneous device integration. The improved technique can be used to laterally integrate dissimilar semiconductor device structures on a lattice mismatched substrate. Using the technique two InP based VCSEL active regions have been integrated onto GaAs without compromising the quality of the photoluminescence. Experimental and numerical simulation results are presented.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; laser cavity resonators; photoluminescence; surface emitting lasers; wafer bonding; GaAs; InP; VCSEL; heterogeneous device integration; lattice mismatched substrate; nonplanar wafer bonding; photoluminescence; Fixtures; Gallium arsenide; Indium phosphide; Lattices; Numerical simulation; Photonics; Semiconductor devices; Substrates; Vertical cavity surface emitting lasers; Wafer bonding;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442797
