Title :
Electroluminescence of InGaAsSbN quantum well diodes grown on InP substrates
Author :
Nakagawa, T. ; Kawamura, Y. ; Amano, M. ; Ouchi, K. ; Inoue, N.
Author_Institution :
Res. Inst. for Adv. Sci. & Technol., Osaka Prefecture Univ., Japan
fDate :
31 May-4 June 2004
Abstract :
InGaAsSbN quantum well diodes operating at 2 μm wavelength region were grown by molecular beam epitaxy (MBE) on InP substrates and their electroluminescence (EL) properties were studied. The emission wavelength of the EL was 2.15 μm for the quantum well diode without nitrogen, while the emission wavelength was as long as 2.43 μm for the quantum well diode with 1.4% nitrogen at room temperature. It was found that the introduction of nitrogen induced a marked reduction of temperature dependence of the band-gap energy of the InGaAsSbN layer.
Keywords :
III-V semiconductors; arsenic compounds; electroluminescence; energy gap; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor diodes; 2 mum; 2.15 mum; InGaAsSbN; InP; MBE; band-gap energy; electroluminescence; molecular beam epitaxy; nitrogen; quantum well diodes; Chemical lasers; Electroluminescence; Epitaxial growth; Gas lasers; Indium phosphide; Molecular beam epitaxial growth; Nitrogen; Optical materials; Organic light emitting diodes; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442807
