Electroluminescence of InGaAsSbN quantum well diodes grown on InP substrates

Author

Nakagawa, T. ; Kawamura, Y. ; Amano, M. ; Ouchi, K. ; Inoue, N.

Author_Institution

Res. Inst. for Adv. Sci. & Technol., Osaka Prefecture Univ., Japan

fYear

2004

fDate

31 May-4 June 2004

Firstpage

643

Lastpage

646

Abstract

InGaAsSbN quantum well diodes operating at 2 μm wavelength region were grown by molecular beam epitaxy (MBE) on InP substrates and their electroluminescence (EL) properties were studied. The emission wavelength of the EL was 2.15 μm for the quantum well diode without nitrogen, while the emission wavelength was as long as 2.43 μm for the quantum well diode with 1.4% nitrogen at room temperature. It was found that the introduction of nitrogen induced a marked reduction of temperature dependence of the band-gap energy of the InGaAsSbN layer.

Keywords

III-V semiconductors; arsenic compounds; electroluminescence; energy gap; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor diodes; 2 mum; 2.15 mum; InGaAsSbN; InP; MBE; band-gap energy; electroluminescence; molecular beam epitaxy; nitrogen; quantum well diodes; Chemical lasers; Electroluminescence; Epitaxial growth; Gas lasers; Indium phosphide; Molecular beam epitaxial growth; Nitrogen; Optical materials; Organic light emitting diodes; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442807

Filename

1442807