2 μm InAsSb quantum-dot lasers

Author

Qiu, Yueming ; Uhl, David ; Keo, Sam

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

fYear

2004

fDate

31 May-4 June 2004

Firstpage

691

Lastpage

694

Abstract

High-density InAsSb quantum dots (QD) have been grown on [001] InP substrates using metalorganic vapor phase epitaxy. Photoluminescence shows the QDs emit light in the range of 1.7-2.2 μm at room temperature, and at 2 μm the QDs have luminescence 3 times stronger than that of InAs QDs. Narrow ridge lasers based on a single-stack InAsSb QDs were demonstrated near 2 μm in cw operation at room temperature with a threshold current density of 730 A/cm², output power of 3 mW/facet and a differential quantum efficiency of 13%.

Keywords

III-V semiconductors; MOCVD; arsenic compounds; current density; indium compounds; laser transitions; photoluminescence; quantum dot lasers; vapour phase epitaxial growth; 1.7 to 2.2 mum; 13 percent; InAsSb; differential quantum efficiency; metalorganic vapor phase epitaxy; narrow ridge lasers; photoluminescence; quantum-dot lasers; threshold current density; Epitaxial growth; Indium phosphide; Luminescence; Photoluminescence; Power generation; Power lasers; Quantum dot lasers; Substrates; Temperature distribution; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8595-0

Type

conf

DOI

10.1109/ICIPRM.2004.1442820

Filename

1442820