Title :
2 μm InAsSb quantum-dot lasers
Author :
Qiu, Yueming ; Uhl, David ; Keo, Sam
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
31 May-4 June 2004
Abstract :
High-density InAsSb quantum dots (QD) have been grown on [001] InP substrates using metalorganic vapor phase epitaxy. Photoluminescence shows the QDs emit light in the range of 1.7-2.2 μm at room temperature, and at 2 μm the QDs have luminescence 3 times stronger than that of InAs QDs. Narrow ridge lasers based on a single-stack InAsSb QDs were demonstrated near 2 μm in cw operation at room temperature with a threshold current density of 730 A/cm2, output power of 3 mW/facet and a differential quantum efficiency of 13%.
Keywords :
III-V semiconductors; MOCVD; arsenic compounds; current density; indium compounds; laser transitions; photoluminescence; quantum dot lasers; vapour phase epitaxial growth; 1.7 to 2.2 mum; 13 percent; InAsSb; differential quantum efficiency; metalorganic vapor phase epitaxy; narrow ridge lasers; photoluminescence; quantum-dot lasers; threshold current density; Epitaxial growth; Indium phosphide; Luminescence; Photoluminescence; Power generation; Power lasers; Quantum dot lasers; Substrates; Temperature distribution; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on
Print_ISBN :
0-7803-8595-0
DOI :
10.1109/ICIPRM.2004.1442820
