Highly controllable electrochemical deep etching process on silicon

Author

Chen, Yu ; Wang, Lianwei ; Sarro, P.M.

Author_Institution

Dept. of Electron. Eng. & Nano-tech Center, East China Normal Univ., Shanghai, China

fYear

2005

fDate

30 Jan.-3 Feb. 2005

Firstpage

512

Lastpage

515

Abstract

Electrochemical etching processes due to their low cost and high aspect ratio achievable are a very attractive alternative for deep etching of silicon. In this paper, a highly controllable process with more tolerance for structure design is investigated. Various distributions of design patterns, as well as different experimental conditions, such as light illumination, current modulation and experimental temperature are investigated. An electrochemical etching process in the presence of a magnetic field is also evaluated as a possibility to constrain the boundary effect.

Keywords

elemental semiconductors; etching; magnetic field effects; micromachining; micromechanical devices; silicon; Si; boundary effect; current modulation; design pattern distribution; different experimental conditions; electrochemical deep etching; experimental temperature; light illumination; magnetic field; structure design; Fabrication; Lighting; Micromechanical devices; Optical modulation; Plasma temperature; Process control; Silicon; Temperature distribution; Thyristors; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2005. MEMS 2005. 18th IEEE International Conference on

ISSN

1084-6999

Print_ISBN

0-7803-8732-5

Type

conf

DOI

10.1109/MEMSYS.2005.1453979

Filename

1453979