A fully-dry PECVD-oxynitride process for microGC column fabrication

Author

Agah, M. ; Wise, Y.D.

Author_Institution

Eng. Res. Center for Wireless Integrated MicroSystems, Michigan Univ., Ann Arbor, MI, USA

fYear

2005

fDate

30 Jan.-3 Feb. 2005

Firstpage

774

Lastpage

777

Abstract

This paper reports the development of a fully-dry process for fabricating ultra-low-mass separation columns for a micro gas chromatograph (μGC). This new CMOS-compatible buried-channel technique utilizes stress-free PECVD oxynitride films having a deposition rate of about 1 μm/min and an etch rate less than 200Å/min in SF₆ plasma to form 25cm-long 65μm-ID semicircular columns on a 6mm square chip. In vacuum, such columns can achieve 100°C at less than 10mW with a thermal time constant under 1 min.

Keywords

CVD coatings; chromatography; micromechanical devices; plasma CVD; silicon compounds; μGC; 25 cm; 6 mm; 65 micron; CMOS-compatible buried-channel technique; SF₆; SF₆ plasma; deposition rate; dry PECVD oxynitride process; etch rate; micro gas chromatograph; microGC column fabrication; semicircular column; stress-free PECVD oxynitride films; ultra-low-mass separation column fabrication; Delay; Energy consumption; Etching; Gases; Monitoring; Plasma applications; Semiconductor films; Silicon; Sulfur hexafluoride; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro Electro Mechanical Systems, 2005. MEMS 2005. 18th IEEE International Conference on

ISSN

1084-6999

Print_ISBN

0-7803-8732-5

Type

conf

DOI

10.1109/MEMSYS.2005.1454044

Filename

1454044