Title :
SET Tolerance of 65 nm CMOS Majority Voters: A Comparative Study
Author :
Danilov, Igor A. ; Gorbunov, Maxim S. ; Antonov, A.A.
Author_Institution :
Sci. Res. Inst. of Syst. Anal., Moscow, Russia
Abstract :
We study the design of different majority voters based on a commercial 65 nm CMOS technology, propose the test system and discuss the experimental results of heavy ion irradiation campaign and the proposed relative efficiency criterion for choosing the voter for a given TMR strategy.
Keywords :
CMOS logic circuits; integrated circuit reliability; ion beam effects; radiation hardening (electronics); CMOS majority voter; TMR strategy; heavy ion irradiation campaign; relative efficiency criteria; single event transient tolerance; size 65 nm; triple modular redundancy; Arrays; CMOS integrated circuits; Fault tolerance; Fault tolerant systems; Field programmable gate arrays; Transistors; Tunneling magnetoresistance; CMOS; DICE; critical charge; heavy ions; majority voter; single-event transient (SET); triple-modular redundancy (TMR);
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2014.2311297
