DocumentCode :
437918
Title :
Simulation of the CMS prototype silicon pixel sensors and comparison with test beam measurements
Author :
Chiochia, Vincenzo ; Swartz, Morris ; Bortoletto, Daniela ; Cremaldi, Lucien ; Cucciarelli, Susanna ; Dorokhov, Andrei ; Konecki, Marcin ; Prokofiev, Kirill ; Regenfus, Christian ; Rohe, Tilman ; Sanders, David A. ; Son, Seunghee ; Speer, Thomas
Author_Institution :
Physik Inst., Zurich Univ., Switzerland
Volume :
2
fYear :
2004
fDate :
16-22 Oct. 2004
Firstpage :
1245
Abstract :
Charge collection measurements performed on heavily irradiated p-spray dofz pixel sensors with a grazing angle hadron beam provide a sensitive determination of the electric field within the detectors. The data are compared with a complete charge transport simulation of the sensor which includes signal trapping and charge induction effects. A linearly varying electric field based upon the standard picture of a constant type-inverted effective doping density is inconsistent with the data. A two-trap double junction model implemented in ISE TCAD software can be tuned to produce a doubly-peaked electric field which describes the data reasonably well at two different fluences. The modeled field differs somewhat from previous determinations based upon the transient current technique. The model can also account for the level of signal trapping observed in the data.
Keywords :
particle spectrometers; position sensitive particle detectors; silicon radiation detectors; CMS prototype silicon pixel sensors; ISE TCAD software; charge collection measurements; charge induction effects; charge transport simulation; constant type-inverted effective doping density; doubly-peaked electric field; grazing angle hadron beam; heavily irradiated p-spray dofz pixel sensors; linearly varying electric field; signal trapping; test beam measurements; transient current technique; two-trap double junction model; Charge measurement; Collision mitigation; Current measurement; Doping; Electric variables measurement; Performance evaluation; Semiconductor process modeling; Silicon; Testing; Virtual prototyping;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2004 IEEE
ISSN :
1082-3654
Print_ISBN :
0-7803-8700-7
Electronic_ISBN :
1082-3654
Type :
conf
DOI :
10.1109/NSSMIC.2004.1462427
Filename :
1462427
Link To Document :
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