Title :
IDeF-X ASIC for Cd(Zn)Te spectro-imaging systems
Author :
Limousin, O. ; Gevin, O. ; Lugiez, F. ; Chipaux, R. ; Delagnes, E. ; Dirks, B. ; Horeau, B.
Author_Institution :
CEA Saclay, Gif-sur-Yvette, France
Abstract :
Joint progresses in Cd(Zn)Te detectors, microelectronics and interconnection technologies open the way for a new generation of instruments for physics and astrophysics applications in the energy range from 1 to 1000 keV. Even working between -20 and 20degC, these instruments will offer high spatial resolution (pixel size ranging from 300 times 300 mum2 to few mm2), high spectral response and high detection efficiency. To reach these goals, reliable, highly integrated, low noise and low power consumption electronics is mandatory. Our group is currently developing a new ASIC detector front-end named IDeF-X, for modular spectro-imaging system based on the use of Cd(Zn)Te detectors. We present here the first version of IDeF-X which consists in a set of ten low noise charge sensitive preamplifiers (CSA). It has been processed with the standard AMS 0.35 mum CMOS technology. The CSA´s are designed to be DC coupled to detectors having a low dark current at room temperature. The various preamps implemented are optimized for detector capacitances ranging from 0.5 up to 30 pF.
Keywords :
CMOS integrated circuits; X-ray detection; X-ray spectrometers; application specific integrated circuits; nuclear electronics; particle spectrometers; position sensitive particle detectors; preamplifiers; semiconductor counters; semiconductor device noise; -20 to 20 degC; 0.35 mum; 0.5 to 30 pF; 1 to 1000 keV; 300 mum; ASIC detector front-end; CMOS technology; Cd(Zn)Te detectors; Cd(Zn)Te spectro-imaging systems; DC coupled charge sensitive preamplifiers; astrophysics applications; dark current; detection efficiency; detector capacitances; highly integrated electronics; imaging detector front-end; interconnection technologies; low noise charge sensitive preamplifiers; low noise electronics; low power consumption electronics; microelectronics; modular spectro-imaging system; physics applications; pixel size; spatial resolution; spectral response; Application specific integrated circuits; Astrophysics; CMOS technology; Detectors; Energy consumption; Instruments; Microelectronics; Physics; Power system reliability; Spatial resolution;
Conference_Titel :
Nuclear Science Symposium Conference Record, 2004 IEEE
Conference_Location :
Rome
Print_ISBN :
0-7803-8700-7
Electronic_ISBN :
1082-3654
DOI :
10.1109/NSSMIC.2004.1462503
