Title :
Magnetic properties of low temperature grown Si:Ce thin films on [001] Si substrate by molecular beam epitaxy
Author :
Terao, T. ; Yoshimizu, Y. ; Nishimura, Y. ; Fujimura, N.
Author_Institution :
Graduate Sch. of Eng., Osaka Prefecture Univ., Japan
Abstract :
A diluted magnetic semiconductor, Si:Ce thin films with the Ce concentration below 4.3 at%, were prepared by solid source molecular beam epitaxy. The lattice constant of the Si:Ce film increases with increasing the Ce concentration, while it decreases above Ce 0.2 at%. Magnetization measured at 4.2 K for the samples with the Ce concentration up to 0.2 at% also increases with increasing the Ce concentration up to 0.2 at%. The amount of substituted Ce in Si is considered to play an important role for the magnetic properties.
Keywords :
cerium; doping profiles; elemental semiconductors; lattice constants; magnetic epitaxial layers; magnetisation; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; semimagnetic semiconductors; silicon; 4.2 K; Si; Si:Ce; [001] Si substrate; diluted magnetic semiconductor; lattice constant; magnetization; solid source molecular beam epitaxy; thin films; Lattices; Magnetic films; Magnetic properties; Magnetic semiconductors; Molecular beam epitaxial growth; Semiconductor films; Semiconductor thin films; Solids; Substrates; Temperature;
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
DOI :
10.1109/INTMAG.2005.1463562