• DocumentCode
    438203
  • Title

    Room temperature ferromagnetism and magnetoresistance in chromium-doped indium tin oxide

  • Author

    Kim, Hyoun Soo ; Ji, Sung Hwa ; Kim, Hyojin ; Kim, Dojin ; Yoon, Soon Kil ; Choo, Woong Kil

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Korea Adv. Inst. of Sci. & Technol., Daejon, South Korea
  • fYear
    2005
  • fDate
    4-8 April 2005
  • Firstpage
    281
  • Lastpage
    282
  • Abstract
    The possibility of room-temperature ferromagnetism in In2O3 thin films with bixbyite structure by Sn and Cr atom co-doping is investigated. For an n-type Cr 5 mol% film, room-temperature ferromagnetism is observed with a saturated magnetization ∼0.7 emu/cm3, remnant magnetization ∼0.2 emu/cm3, cohesive field of 28 Oe. Also, the M-T curves in magnetic field of 1 kOe for zero field cooling and field cooling for Cr 5 mol% film display the steep increase of magnetization below 30 K for decreasing temperature without abnormality as Neel temperature of antiferromagnetism and noticeable deviation indicating spin-glass behavior are present. A positive magnetoresistance is observed in the region from 5 kOe to 28 kOe for the Cr 5 mol% film. This considers the s-d exchange coupling between the conducting carrier and localized spins of Cr ions.
  • Keywords
    Curie temperature; Neel temperature; antiferromagnetic materials; chromium; exchange interactions (electron); ferromagnetic materials; indium compounds; magnetic cooling; magnetic semiconductors; magnetic thin films; magnetoresistance; remanence; semiconductor doping; semiconductor thin films; spin glasses; 293 to 298 K; InSnO:Cr; Neel temperature; antiferromagnetism; atom co-doping; bixbyite structure; conducting carrier; field cooling; localized spins; n-type film; positive magnetoresistance; remnant magnetization; room-temperature ferromagnetism; s-d exchange coupling; saturated magnetization; spin-glass behavior; thin films; Chromium; Cooling; Displays; Indium tin oxide; Magnetic fields; Magnetic films; Magnetization; Magnetoresistance; Temperature; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
  • Print_ISBN
    0-7803-9009-1
  • Type

    conf

  • DOI
    10.1109/INTMAG.2005.1463569
  • Filename
    1463569