High-temperature operations of rotation angle sensors with spin-valve-type magnetic tunnel junctions

Author

Takenaga, T. ; Sadeh, B. ; Kuroiwa, T. ; Kobayashi, H. ; Oomori, T.

Author_Institution

Adv. Technol. R&D Center, Mitsubishi Electr. Corp., Amagasaki, Japan

fYear

2005

fDate

4-8 April 2005

Firstpage

417

Lastpage

418

Abstract

Magnetic tunnel junctions (MTJs) with spin-valve-type structures have been considered for application as sensors for the rotation angle of magnetic fields. In this report, we examine the operation of rotation-angle sensors with spin-valve type magnetic tunnel junctions with the pinned layer structure of IrMn/CoFe at temperatures up to 150 °C. Additionally, in order to suppress the rotation of the magnetic moment in the pinned layer, we examine the magnetic properties of pinned layer structure with synthetic antiferromagnetic (SyAF) layer.

Keywords

magnetic fields; magnetic moments; magnetic sensors; magnetic tunnelling; spin valves; magnetic fields; magnetic moment; pinned layer structure; rotation angle sensors; spin-valve-type magnetic tunnel junctions; synthetic antiferromagnetic layer; Antiferromagnetic materials; Magnetic field measurement; Magnetic moments; Magnetic sensors; Magnetic tunneling; Magnetization; Rotation measurement; Temperature dependence; Temperature measurement; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Print_ISBN

0-7803-9009-1

Type

conf

DOI

10.1109/INTMAG.2005.1463637

Filename

1463637