DocumentCode :
438235
Title :
Magnetite Schottky barriers on GaAs substrates
Author :
Watts, Steven M. ; Booth, Catherinc ; Van Dijken, S. ; Coey, J.M.D.
Author_Institution :
Dept. of Phys., Trinity Coll., Dublin, Ireland
fYear :
2005
fDate :
4-8 April 2005
Firstpage :
633
Lastpage :
634
Abstract :
The electrical transport properties across the interface of hybrid Fe3O4/GaAs(001) structures were investigated in this study. The substrates with p- and n-type structures of different doping levels were used. Rectification was observed for the medium-doped substrates. It was determined that the Schottky barrier height of medium doped n-type structure was 0.55-0.6 eV while that of the medium p-type structure was 0.45 eV. At high doping level, the transport characteristics of the substrates were found to be linear at room temperature but strongly nonlinear at low temperatures. It was concluded that with proper engineering of the semiconductor surface doping profile, it is possible to isolate different transport modes for spin injection experiments.
Keywords :
III-V semiconductors; Schottky barriers; doping profiles; ferrites; gallium arsenide; rectification; semiconductor-insulator boundaries; spin polarised transport; 0.45 eV; 0.55 to 0.6 eV; 293 to 298 K; Fe3O4-GaAs; GaAs; Schottky barrier height; doping levels; electrical transport properties; magnetite; rectification; semiconductor surface doping profile; spin injection experiments; transport modes; Gallium arsenide; Laboratories; Magnetic materials; Magnetic semiconductors; Schottky barriers; Semiconductor films; Semiconductor materials; Spin polarized transport; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
Type :
conf
DOI :
10.1109/INTMAG.2005.1463745
Filename :
1463745
Link To Document :
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