A new switching architecture for MRAM: local field switching

Author

Hwang, Injun ; Park, Wanjun ; Cho, Y.J. ; Kim, K.W. ; Jang, Y.M. ; Jeong, W.C. ; Oh, J.H. ; Lee, I.E. ; Hongseog Kim ; Kim, T.W.

Author_Institution

Samsung Adv. Inst. of Technol., Kiheung, South Korea

fYear

2005

fDate

4-8 April 2005

Firstpage

845

Lastpage

846

Abstract

A new switching architecture for MRAM is proposed without D/L (digit line) current that uses a local magnetic field generated directly by the current flowing from bottom electrode (BE) to MTJ (magnetic tunnelling junction) cell. The local field switching is totally different from the current-driven switching since it uses the magnetic field generated by the BE current, not the spin transfer torque in the free layer of the MTJ. The MTJ cells shows that magnetoresistance ratio is 23% at 0.1 V bias voltage. It is effectively switched around 0.5 V. The current directions are irrelevant with switching. This result shows that the local field switching can be directly applied to the high selective MRAM array without disturbing neighbor cells.

Keywords

magnetic storage; magnetic switching; magnetic tunnelling; magnetoresistance; random-access storage; MRAM; digit line current; local field switching; magnetic tunnelling junction; magnetoresistance ratio; switching architecture; Electrodes; Magnetic fields; Magnetic switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Print_ISBN

0-7803-9009-1

Type

conf

DOI

10.1109/INTMAG.2005.1463851

Filename

1463851