High frequency magnetic field detection by UHF carrier type thin film sensor

The detection of high frequency field up to 1 GHz by the use of a new sensor element, used for highly sensitive giant magneto-impedance sensors, was discussed. This element, prepared in a magnetic multilayer like structure functions to decrease the optimum bias field. The Ta[/NiFe/Cu]₆₆/NiFe/Ta multilayer was deposited by RF sputtering with a total thickness of 1010 nm. Results show that the bias field was only one tenth of the theoretical resonance field of conventional high frequency carrier type sensors, a value that is sufficiently low for practical use.