High frequency magnetic field detection by UHF carrier type thin film sensor

Author

Tan, K. ; Yamaguchi, M. ; Yamakawa, K.

Author_Institution

Akita Res. Inst. of Adv. Technol., Japan

fYear

2005

fDate

4-8 April 2005

Firstpage

1265

Lastpage

1266

Abstract

The detection of high frequency field up to 1 GHz by the use of a new sensor element, used for highly sensitive giant magneto-impedance sensors, was discussed. This element, prepared in a magnetic multilayer like structure functions to decrease the optimum bias field. The Ta[/NiFe/Cu]₆₆/NiFe/Ta multilayer was deposited by RF sputtering with a total thickness of 1010 nm. Results show that the bias field was only one tenth of the theoretical resonance field of conventional high frequency carrier type sensors, a value that is sufficiently low for practical use.

Keywords

Permalloy; UHF detectors; copper; giant magnetoresistance; magnetic field measurement; magnetic multilayers; magnetic sensors; magnetic thin films; magnetoresistive devices; metallic thin films; sputtered coatings; tantalum; 1 GHz; 1010 nm; RF sputtering; Ta-(NiFe-Cu)₆₆-NiFe-Ta; UHF carrier type thin film sensor; giant magnetoimpedance sensors; high frequency magnetic field detection; magnetic multilayer like structure; optimum bias field; sensor element; theoretical resonance field; AC generators; Electromagnetic measurements; Electromagnetic radiation; Frequency measurement; Magnetic field measurement; Magnetic hysteresis; Magnetic sensors; Microstrip; Strips; Thin film sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International

Print_ISBN

0-7803-9009-1

Type

conf

DOI

10.1109/INTMAG.2005.1464062

Filename

1464062