Study on behaviors of pinned layer by high field transfer curve

A synthetic-pinned GMR sensor is prepared by sputtering method and is lapped until its resistance reaches approximately R = 40Ω. The behaviour of the pinned layer is investigated by measuring the transfer curve change using a high-field quasi-tester. No change is observed at minor curve, whereas major curve shows completely different results, thus it is clear that introduction of high field quasi test combined with low field quasi test provides in-depth information on overall performance of the GMR sensor. Based on actual measurement of the transfer curve, several models are employed for the interpretation of each case, especially from the viewpoint of behavior of pinned layer exchange coupled by antiferromagnetic layer.