Title :
Nanometer scaled magnetic tunnel junctions fabricated by a substrate biased plasma etching technique
Author :
Lee, K.I. ; Chang, J.Y. ; Han, S.H. ; Shin, K.H. ; Lee, W.Y.
Author_Institution :
Dept. of Mater. Sci. & Eng., Yonsei Univ., Seoul, South Korea
Abstract :
SiO2/Ta(50 Å)/Ni81Fe19(60 Å)/Fe50Mn50(80 Å)/FMBOTTOM(40 Å)/Al2O3(12-16 Å)/FMTOP(100 Å)/Ta(20 Å) are prepared on a thermally oxidized Si(100) substrate. FM layer used is Ni81Fe19 or Co84Fe16. The effect of substrate-biased plasma etching process on magnetotransport properties in magnetic tunnel junctions compared to that of the device prepared by a conventional way is investigated. Several properties such as TMR ratio and junction resistance, magnetization switching behavior of the MTJs are also investigated.
Keywords :
aluminium compounds; ferromagnetic materials; iron alloys; magnetic switching; magnetisation; manganese alloys; nanostructured materials; nanotechnology; nickel alloys; silicon compounds; sputter etching; tantalum; tunnelling magnetoresistance; Si; SiO2-Ta-Ni81Fe19-Fe50Mn50-Ni81Fe19-Al2O3-Co84Fe16-Ta; TMR; dry etching process; electron beam lithography; junction resistance; lift-off technique; magnetization switching; magnetotransport properties; nanometer scaled magnetic tunnel junctions; substrate biased plasma etching technique; thermally oxidized substrate; Etching; Iron; Magnetic devices; Magnetic properties; Magnetic switching; Magnetic tunneling; Magnetization; Plasma applications; Plasma devices; Plasma properties;
Conference_Titel :
Magnetics Conference, 2005. INTERMAG Asia 2005. Digests of the IEEE International
Print_ISBN :
0-7803-9009-1
DOI :
10.1109/INTMAG.2005.1464424
