• DocumentCode
    43837
  • Title

    Three-Dimensional Chips Can Be Cool: Thermal Study of VeSFET-Based 3-D Chips

  • Author

    Xiang Qiu ; Marek-Sadowska, Malgorzata ; Maly, Wojciech P.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of California at Santa Barbara, Santa Barbara, CA, USA
  • Volume
    23
  • Issue
    5
  • fYear
    2015
  • fDate
    May-15
  • Firstpage
    869
  • Lastpage
    878
  • Abstract
    Thermal management becomes a huge challenge for modern IC designers, especially when chips go 3-D. Vertical slit field-effect transistor (VeSFET) technology provides an alternative thermal-friendly design choice. VeSFET-based chips not only have a much lower power density but also a better vertical thermal conductivity than their CMOS counterparts. For a VeSFET chip with ten stacked dies, the temperature increase is only 30% of that for CMOS-based chip. Assuming the same scaling trend for CMOS and VeSFET, VeSFET 3-D chips can postpone the appearance of dark silicon by three technology nodes compared with CMOS implementations. For VeSFET-based designs, different topologies of transistor arrays may result in different thermal behaviors. We perform thermal characterization of two-transistor array topologies.
  • Keywords
    CMOS integrated circuits; field effect transistors; thermal conductivity; CMOS-based chip; VeSFET-based 3D chips; alternative thermal-friendly design choice; dark silicon; modern IC designers; technology nodes; thermal behaviors; thermal management; three-dimensional chips; two-transistor array topologies; vertical slit field-effect transistor technology; vertical thermal conductivity; Bonding; CMOS integrated circuits; Conductivity; Heating; Silicon; Thermal conductivity; Transistors; 3-D; CMOS; canvas; thermal; vertical slit field-effect transistor (VeSFET); vertical slit field-effect transistor (VeSFET).;
  • fLanguage
    English
  • Journal_Title
    Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1063-8210
  • Type

    jour

  • DOI
    10.1109/TVLSI.2014.2325551
  • Filename
    6827975