DocumentCode
438482
Title
Zr doped GSO:Ce single crystals and their scintillation performance
Author
Shimura, N. ; Kamada, M. ; Gunji, A. ; Yamana, S. ; Usui, T. ; Kurashige, K. ; Ishibashi, H. ; Senguttuvan, N. ; Shimizu, S. ; Sumiya, K. ; Murayama, H.
Author_Institution
Katsuta Product Center R&D Group, Hitachi Chem. Co. Ltd., Ibaraki
Volume
5
fYear
2004
fDate
16-22 Oct. 2004
Firstpage
2720
Lastpage
2723
Abstract
Cerium doped Gd2SiO5 (GSO:Ce) single crystal is used as a scintillator for Positron Emission Tomography (PET). GSO:Ce has a good balance of every scintillation properties, but the only disadvantage is the decreasing light output by coloring caused by a small amount of Ce4+ in the crystal especially at higher concentration of Ce. In order to improve the scintillation performance, we have tried to grow co-doped GSO single crystal using conventional starting materials with additional impurities, and evaluate the scintillation performance. Zr doping is found to be effective in preventing coloring and in improving light output. Around 200 ppm Zr doped GSO:Ce have shown maximum light output which is about 20% larger than that of conventional GSO:Ce. This improvement can be explained by the fact that the amount of Ce4+ in the crystal might be changed to Ce3+ due to charge compensation caused by dopant Zr4+ in a Gd3+ site thereby decreasing the light absorption in the crystal
Keywords
cerium; crystal growth; doping; gadolinium compounds; gamma-ray detection; positron emission tomography; solid scintillation detectors; zirconium; Gd2SiO5; Gd2SiO5:Ce,Zr; Zr doped GSO:Ce single crystals; charge compensation; conventional starting materials; crystal growth; crystal impurities; gadolinium compounds; light absorption; light output; positron emission tomography; scintillation detector; Cerium; Crystalline materials; Crystals; Doping; Impurities; Nitrogen; Positron emission tomography; Raw materials; Research and development; Zirconium;
fLanguage
English
Publisher
ieee
Conference_Titel
Nuclear Science Symposium Conference Record, 2004 IEEE
Conference_Location
Rome
ISSN
1082-3654
Print_ISBN
0-7803-8700-7
Electronic_ISBN
1082-3654
Type
conf
DOI
10.1109/NSSMIC.2004.1466252
Filename
1466252
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