DocumentCode :
438683
Title :
Compton camera coincidences in the silicon drift detector
Author :
Çonka-Nurdan, T. ; Nurdan, K. ; Walenta, A.H. ; Chiosa, I. ; Freisleben, B. ; Pavel, N.A. ; Strüder, L.
Author_Institution :
FB Phys., Siegen Univ., Germany
Volume :
6
fYear :
2004
fDate :
16-22 Oct. 2004
Firstpage :
3839
Abstract :
A Compton camera system consisting of a silicon drift detector (SDD) and an Anger camera has been constructed to study coincidence events and the possibility of tracking a recoil electron. An event is considered as a coincidence when a photon emitted from a radioactive source is first Compton scattered in the SDD where the recoil electron deposits its energy and the scattered photon undergoes a photoelectric absorption in the NaI(Tl) crystal of the Anger camera. SDD is composed of a monolithic array of 19 cells each having an on-chip transistor which provides the first stage amplification. 137Cs source has been finely collimated in order to study events occurring at different locations within a single cell. Electron tracks depositing energy in multiple cells have also been studied by considering time coincidences between SDD cells and the Anger camera. The equipment is designed such that the measurements can be done in all detector orientations and kinematical conditions. The angular and energy distribution of coincidence events have been studied with high statistics. Energy resolution and angle measurements performed with this detector system will be presented in this paper.
Keywords :
Compton effect; caesium; radiation detection; radioactive sources; silicon radiation detectors; statistics; 137Cs; 137Cs source; Anger camera; Compton camera system; NaI crystal; angle measurements; electron tracks; energy resolution; monolithic array; on-chip transistor; photoelectric absorption; radioactive source; silicon drift detector; statistics; Cameras; Collimators; Detectors; Electromagnetic scattering; Electromagnetic wave absorption; Electron emission; Event detection; Particle scattering; Photonic crystals; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nuclear Science Symposium Conference Record, 2004 IEEE
ISSN :
1082-3654
Print_ISBN :
0-7803-8700-7
Electronic_ISBN :
1082-3654
Type :
conf
DOI :
10.1109/NSSMIC.2004.1466717
Filename :
1466717
Link To Document :
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