DocumentCode :
43914
Title :
Intersubband Transition in Asymmetric Quantum Well Infrared Photodetector
Author :
Khan, Muhammad Asad ; Pavel, A.A. ; Islam, Nahina
Author_Institution :
Univ. of Missouri-Columbia, Columbia, MO, USA
Volume :
12
Issue :
4
fYear :
2013
fDate :
Jul-13
Firstpage :
521
Lastpage :
523
Abstract :
Intersubband transition in perfect rectangular quantum well is known to be limited by “selection rule” that results from certain symmetries of wavefunctions. This letter presents Green´s function-based analysis that incorporates energy state broadening due to optical absorption and shows how stepped quantum well can introduce required “asymmetry” to defy the selection rule by breaking the bound state wavefunction symmetry and thus improve the overall optical absorption. Calculation for AlxGa1-xAs/GaAs/InyGa1-yAs stepped quantum well confirms that coupling among certain energy states increases with asymmetry and, as a result, so does the magnitude of optical absorption. The simulation approach presented is simple, physically intuitive, and extendable to any arbitrary shaped asymmetric quantum well.
Keywords :
Green´s function methods; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared detectors; infrared spectra; photodetectors; semiconductor quantum wells; spectral line broadening; wave functions; AlxGa1-xAs-GaAs-InyGa1-yAs; Green function-based analysis; arbitrary shaped asymmetric quantum well; asymmetric quantum well infrared photodetector; bound state wavefunction symmetry; energy state broadening; intersubband transition; optical absorption; rectangular quantum well; stepped quantum well; Absorption; broadening; intersubband transition; quantum well photodetector; wavefunction symmetry;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2013.2260556
Filename :
6512057
Link To Document :
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