Advances in BJT techniques for high-performance transceivers

New low-inertia bipolar junction transistor (BJT) technologies have paved the way for many novel cell designs during the past few years. These IC processes are optimized for operation at low supply voltages and support the high-performance passive components (such as inductors, low-capacitance thin-film resistors and low-resistance metal-oxide-metal capacitors) needed to realize integrated transceivers. This paper presents several circuit concepts, of general value, which have proven useful in the realization of high-performance cellular and cordless telephony applications.