DocumentCode
439192
Title
New two single-port GaAs memory cell
Author
Bernal, Alvaro ; Guyot, Alain
Author_Institution
Integrated System Design, TIMA Laboratory, Grenoble, France
fYear
1997
fDate
16-18 Sept. 1997
Firstpage
180
Lastpage
183
Abstract
This paper presents a new GaAs memory cell with separate read and write single-ports which mixes the principal advantages of the current-mirror and conventional cells implementation. From simulation results, an address access time of Ins with 20 µA/cell power consumption has been achieved. The cell can be operated with single supply voltage of 1V up to 2V.
Keywords
Cache memory; Circuit testing; Gallium arsenide; Leakage current; Logic; MESFETs; Random access memory; Read-write memory; Schottky diodes; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1997. ESSCIRC '97. Proceedings of the 23rd European
Conference_Location
Southampton, UK
Type
conf
Filename
1470893
Link To Document