DocumentCode :
439222
Title :
A low-power, high-speed 0.25 µm GaAs D-FF
Author :
Enomoto, T. ; Hirobe, A. ; Iwata, H. ; Fujii, M. ; Yoshida, N. ; Asai, S.
Author_Institution :
Chuo University, Tokyo, Japan
fYear :
1997
fDate :
16-18 Sept. 1997
Firstpage :
300
Lastpage :
303
Abstract :
A design for low-power, high-speed static GaAs HJFET flip-flops (D-FFs) is discussed in detail. Four different types of delay latches based on NOR gates were designed. These latches were used to design 16 different types of D-FFs. A D-FF named "1POP" was chosen for fabrication using 0.25 µm GaAs HJFET technology. Experimental results showed that both the maximum operating clock frequencies (fmc) and power dissipations at fmcwere proportional to supply voltage (VD). The "1P0P" D-FF operated at fmcof 5.17 GHz on VD=0.6 V consuming only 2.03 mW that is the world\´s lowest power dissipation. Clear, wide eye openings were obtained in a fmcrange up to 7.15 GHz. Operating speeds were confirmed at an error rate of less than 10-9with a (29-1) pseudo-random signal.
Keywords :
Clocks; Delay; Driver circuits; Energy consumption; Equations; Flip-flops; Gallium arsenide; Latches; Master-slave; Power dissipation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1997. ESSCIRC '97. Proceedings of the 23rd European
Conference_Location :
Southampton, UK
Type :
conf
Filename :
1470923
Link To Document :
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