Title :
A 1 GHz, 40 mW fully integrated continuous-time second-order bandpass filter in GaAs technology
Author_Institution :
IEMN, Villeneuve d´´Ascq, France
Abstract :
A Second-Order bandpass Gm-C filter with a 1 GHz center frequency is presented. The circuit features an independent control of the cutoff frequency and of the quality factor. The fully-differential integrators use a gain-enhancement technique, capable of increasing the basic transconductor open-loop DC gain to 52 dB. The filter has been fabricated in a digital 0.7 µm, GaAs MESFET process featuring 25 GHz fttransistors. It dissipates 40 mW from a single 1.9 V power supply.
Keywords :
Band pass filters; Cutoff frequency; Digital filters; Gain; Gallium arsenide; Integrated circuit technology; MESFETs; Open loop systems; Q factor; Transconductors;
Conference_Titel :
Solid-State Circuits Conference, 1997. ESSCIRC '97. Proceedings of the 23rd European
Conference_Location :
Southampton, UK