Title :
A 0.25 µm CMOS fully integrated IF-baseband-strip for a single superheterodyne GSM receiver
Author :
Orsatti, P. ; Piazza, F. ; Qiuting Huang
Author_Institution :
ETH Zurich, Switzerland
Abstract :
An IF-strip for a one chip single superheterodyne GSM receiver has been implemented in a 0.25 µm CMOS technology. The strip contains a -20..60dB 71MHz IF-amplifier, a quadrature demodulator and low-pass output filters. Measurements show an overall voltage gain of 89dB and a noise figure of 3.8dB. Phase and amplitude mismatches of the I,Q demodulator are well below 1 degree or 0.1dB respectively. The system consumes 5.5mA from a 2.5V power supply.
Keywords :
CMOS technology; Demodulation; GSM; Gain measurement; Low pass filters; Noise figure; Noise measurement; Semiconductor device measurement; Strips; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 1998. ESSCIRC '98. Proceedings of the 24th European
Conference_Location :
The Hague, The Netherlands
DOI :
10.1109/ESSCIR.1998.186209
