• DocumentCode
    439257
  • Title

    A 5.5-GHz low noise amplifier in SiGe BiCMOS

  • Author

    Ainspan, Herschel A. ; Webster, Charles S. ; Plouchart, Jean-Olivier ; Soyuer, Mehmet

  • Author_Institution
    IBM T. J. Watson Research Center, Yorktown Heights, NY
  • fYear
    1998
  • fDate
    22-24 Sept. 1998
  • Firstpage
    80
  • Lastpage
    83
  • Abstract
    A 5.5-GHz low-noise amplifier (LNA) with switchable gain and temperature and supply-voltage compensation implemented in SiGe BiCMOS is presented. The LNA gain (S21) and 50-Ω noise figure are 14.1 dB and 2.4 dB, respectively, at 25°C. An on-chip proportional-to-absolute temperature (PTAT) current reference reduces the variation in S21and NF50Ωto 0.35 dB and 0.5 dB, respectively, from 0 to 100°C. The input third-order intermodulation intercept is +1.4 dBm. The circuit consumes 4.7 mA total current from a 2.5-V supply.
  • Keywords
    BiCMOS integrated circuits; Costs; Germanium silicon alloys; Inductors; Low-noise amplifiers; Noise figure; Silicon germanium; Switches; Temperature; Wireless sensor networks;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1998. ESSCIRC '98. Proceedings of the 24th European
  • Type

    conf

  • DOI
    10.1109/ESSCIR.1998.186213
  • Filename
    1470970
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=439257