Title :
A 5.5-GHz low noise amplifier in SiGe BiCMOS
Author :
Ainspan, Herschel A. ; Webster, Charles S. ; Plouchart, Jean-Olivier ; Soyuer, Mehmet
Author_Institution :
IBM T. J. Watson Research Center, Yorktown Heights, NY
Abstract :
A 5.5-GHz low-noise amplifier (LNA) with switchable gain and temperature and supply-voltage compensation implemented in SiGe BiCMOS is presented. The LNA gain (S21) and 50-Ω noise figure are 14.1 dB and 2.4 dB, respectively, at 25°C. An on-chip proportional-to-absolute temperature (PTAT) current reference reduces the variation in S21and NF50Ωto 0.35 dB and 0.5 dB, respectively, from 0 to 100°C. The input third-order intermodulation intercept is +1.4 dBm. The circuit consumes 4.7 mA total current from a 2.5-V supply.
Keywords :
BiCMOS integrated circuits; Costs; Germanium silicon alloys; Inductors; Low-noise amplifiers; Noise figure; Silicon germanium; Switches; Temperature; Wireless sensor networks;
Conference_Titel :
Solid-State Circuits Conference, 1998. ESSCIRC '98. Proceedings of the 24th European
DOI :
10.1109/ESSCIR.1998.186213
