DocumentCode :
439280
Title :
A 1.0V 180Mhz 85 µ W/Mhz 8k × 16b SRAM in a standard 0.25 µm CMOS
Author :
Frey, C. ; Dugalleix, S. ; Genevaux, F. ; Schoellkopf, J.-P.
Author_Institution :
SGS-Thomson Microelectronics, Crolles, France
fYear :
1998
fDate :
22-24 Sept. 1998
Firstpage :
192
Lastpage :
195
Abstract :
A low voltage embedded single port memory implemented in a 6 metals, 0.25µm standard CMOS process is described. The chip is achieving 180Mhz maximum frequency, with a 4.2ns access time at 1V and 25°C. The hierarchical wordline architecture, and a differential output bus allow low power characteristics, at the same time high speed is reached, especially thanks to a novel dynamic wordline decoder.
Keywords :
CMOS logic circuits; Decoding; Energy consumption; Low voltage; MOS devices; Microelectronics; Pulse amplifiers; Random access memory; Read-write memory; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1998. ESSCIRC '98. Proceedings of the 24th European
Conference_Location :
The Hague, The Netherlands
Type :
conf
DOI :
10.1109/ESSCIR.1998.186241
Filename :
1470998
Link To Document :
بازگشت