• DocumentCode
    439280
  • Title

    A 1.0V 180Mhz 85 µ W/Mhz 8k × 16b SRAM in a standard 0.25 µm CMOS

  • Author

    Frey, C. ; Dugalleix, S. ; Genevaux, F. ; Schoellkopf, J.-P.

  • Author_Institution
    SGS-Thomson Microelectronics, Crolles, France
  • fYear
    1998
  • fDate
    22-24 Sept. 1998
  • Firstpage
    192
  • Lastpage
    195
  • Abstract
    A low voltage embedded single port memory implemented in a 6 metals, 0.25µm standard CMOS process is described. The chip is achieving 180Mhz maximum frequency, with a 4.2ns access time at 1V and 25°C. The hierarchical wordline architecture, and a differential output bus allow low power characteristics, at the same time high speed is reached, especially thanks to a novel dynamic wordline decoder.
  • Keywords
    CMOS logic circuits; Decoding; Energy consumption; Low voltage; MOS devices; Microelectronics; Pulse amplifiers; Random access memory; Read-write memory; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1998. ESSCIRC '98. Proceedings of the 24th European
  • Conference_Location
    The Hague, The Netherlands
  • Type

    conf

  • DOI
    10.1109/ESSCIR.1998.186241
  • Filename
    1470998