• DocumentCode
    439299
  • Title

    Reduction of intrinsic 1/f device noise in a CMOS ring oscillator

  • Author

    Gierkink, S.L.J. ; Klumperink, E.A.M. ; Ikkink, T.J. ; van Tuijl, A.J.M.

  • Author_Institution
    University of Twente, Enschede, Netherlands
  • fYear
    1998
  • fDate
    22-24 Sept. 1998
  • Firstpage
    272
  • Lastpage
    275
  • Abstract
    The implications of intrinsic 1/f device noise reduction in MOS transistors due to periodic on-off switching in a CMOS ring oscillator are explored. It is shown that maximising the amplitude of oscillation helps to reduce the close-in phase noise. Measurement results, corrected for amplitude-dependent upconversion and effective bias show an improvement of 8 dB in phase noise at 1KHz frequency offset from the carrier at 4.5 dB increase in carrier power.
  • Keywords
    Baseband; Frequency; MOSFETs; Noise measurement; Noise reduction; Phase measurement; Phase noise; Ring oscillators; Semiconductor device noise; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1998. ESSCIRC '98. Proceedings of the 24th European
  • Type

    conf

  • DOI
    10.1109/ESSCIR.1998.186261
  • Filename
    1471018
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=439299