• DocumentCode
    439309
  • Title

    A high frame rate image sensor in standard CMOS-technology

  • Author

    Stevanovic, N. ; Hillebrand, M. ; Hosticka, B.J. ; Iurgel, U. ; Teuner, A.

  • Author_Institution
    Fraunhofer Institute of Microelectronic Circuits and Systems, Duisburg, Germany
  • fYear
    1998
  • fDate
    22-24 Sept. 1998
  • Firstpage
    316
  • Lastpage
    319
  • Abstract
    An integrated CMOS image sensor suitable for monitoring fast motion e.g. in very fast industrial processes, crash tests, and high speed machine vision has been developed and tested. The test chip contains 128×128 active sensor cells and it is equipped with an electronic shutter, advanced column current-mode readout circuits and column voltage buffers. For design and fabrication a standard 1.0 µm n-well CMOS process has been used. The size of a single pixel cell is 27.6 µm × 27.6 µm with a fill factor of 42% incorporating four NMOS transistors. The total chip area is 30mm2. The sensor cells show a linear response to illumination. The test chip is capable to acquire 1030 frames/s.
  • Keywords
    CMOS image sensors; CMOS process; Circuit testing; Condition monitoring; Electronic equipment testing; Fabrication; Image sensors; Machine vision; Vehicle crash testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1998. ESSCIRC '98. Proceedings of the 24th European
  • Conference_Location
    The Hague, The Netherlands
  • Type

    conf

  • DOI
    10.1109/ESSCIR.1998.186272
  • Filename
    1471029