DocumentCode
439309
Title
A high frame rate image sensor in standard CMOS-technology
Author
Stevanovic, N. ; Hillebrand, M. ; Hosticka, B.J. ; Iurgel, U. ; Teuner, A.
Author_Institution
Fraunhofer Institute of Microelectronic Circuits and Systems, Duisburg, Germany
fYear
1998
fDate
22-24 Sept. 1998
Firstpage
316
Lastpage
319
Abstract
An integrated CMOS image sensor suitable for monitoring fast motion e.g. in very fast industrial processes, crash tests, and high speed machine vision has been developed and tested. The test chip contains 128×128 active sensor cells and it is equipped with an electronic shutter, advanced column current-mode readout circuits and column voltage buffers. For design and fabrication a standard 1.0 µm n-well CMOS process has been used. The size of a single pixel cell is 27.6 µm × 27.6 µm with a fill factor of 42% incorporating four NMOS transistors. The total chip area is 30mm2. The sensor cells show a linear response to illumination. The test chip is capable to acquire 1030 frames/s.
Keywords
CMOS image sensors; CMOS process; Circuit testing; Condition monitoring; Electronic equipment testing; Fabrication; Image sensors; Machine vision; Vehicle crash testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1998. ESSCIRC '98. Proceedings of the 24th European
Conference_Location
The Hague, The Netherlands
Type
conf
DOI
10.1109/ESSCIR.1998.186272
Filename
1471029
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