DocumentCode :
439342
Title :
BiCMOS differential temperature sensor: Characterization and BIST applications
Author :
Altet, Josep ; Aragonés, Xavier ; Gonzàlez, José Luis ; Mateo, Diego ; Rubio, Antonio
Author_Institution :
Universitat Politècnica de Catalunya, Barcelona, Spain
fYear :
1998
fDate :
22-24 Sept. 1998
Firstpage :
484
Lastpage :
487
Abstract :
Measurements of thermal gradients inside the silicon die can be used for BIST applications. Two temperature sensors sensible to changes of the surface thermal gradient have been implemented in a 1.2 µm BiCMOS technology. Results show that the power dissipated by a circuit can be monitored by placing differential temperature sensors. A detailed analysis of the noise coupled to the sensor in a mixed signal circuit environment is performed.
Keywords :
BiCMOS integrated circuits; Built-in self-test; Circuit noise; Coupling circuits; Monitoring; Performance analysis; Signal analysis; Silicon; Temperature sensors; Working environment noise;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1998. ESSCIRC '98. Proceedings of the 24th European
Type :
conf
DOI :
10.1109/ESSCIR.1998.186314
Filename :
1471071
Link To Document :
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