DocumentCode :
439348
Title :
Overcoming insufficiencies of first order mismatch modeling
Author :
Oehm, Jürgen ; Grünebaum, Ulrich ; Schumacher, Klaus
Author_Institution :
Universität Dortmund, Dortmund, Germany
fYear :
1998
fDate :
22-24 Sept. 1998
Firstpage :
508
Lastpage :
511
Abstract :
Whereas the mismatch law of area [1] and law of distance [2] are acceptable in a first order sense, there a several measurement results which show significant deviations from these simple models. This paper describes a more sophisticated approach to mismatch modeling, based on spatial frequencies on the wafer. This makes it possible to overcome the insufficiencies of the first order modeling and to achieve a generalized representation of mismatch effects. A method for determining the spatial spectrum from measurement data is presented.
Keywords :
Area measurement; Fabrication; Frequency; MOS devices; Noise figure; Performance evaluation; Reactive power; Semiconductor device modeling; Size measurement; Topology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 1998. ESSCIRC '98. Proceedings of the 24th European
Type :
conf
DOI :
10.1109/ESSCIR.1998.186320
Filename :
1471077
Link To Document :
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