DocumentCode
439348
Title
Overcoming insufficiencies of first order mismatch modeling
Author
Oehm, Jürgen ; Grünebaum, Ulrich ; Schumacher, Klaus
Author_Institution
Universität Dortmund, Dortmund, Germany
fYear
1998
fDate
22-24 Sept. 1998
Firstpage
508
Lastpage
511
Abstract
Whereas the mismatch law of area [1] and law of distance [2] are acceptable in a first order sense, there a several measurement results which show significant deviations from these simple models. This paper describes a more sophisticated approach to mismatch modeling, based on spatial frequencies on the wafer. This makes it possible to overcome the insufficiencies of the first order modeling and to achieve a generalized representation of mismatch effects. A method for determining the spatial spectrum from measurement data is presented.
Keywords
Area measurement; Fabrication; Frequency; MOS devices; Noise figure; Performance evaluation; Reactive power; Semiconductor device modeling; Size measurement; Topology;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1998. ESSCIRC '98. Proceedings of the 24th European
Type
conf
DOI
10.1109/ESSCIR.1998.186320
Filename
1471077
Link To Document