Title :
A 200MHz IF, 11 bit, 4th order band-pass Δ Σ ADC in SiGe
Author :
Maurino, R. ; Mole, P.
Author_Institution :
Nortel Networks, Essex, United Kingdom
Abstract :
This paper demonstrates the design of an integrated 4thorder bandpass sigma delta converter which is capable of digitising a 200 kHz band at 200 MHz with 11 bit accuracy. The converter has been successfully fabricated in a 50 GHz SiGe bipolar technology and the modulator consumes 21mA at 3 V. The converter is aimed at the digitisation of wireless signals at a high first IF with a wide dynamic range.
Keywords :
Clocks; Computed tomography; Delta-sigma modulation; Filters; Frequency conversion; Germanium silicon alloys; Sampling methods; Silicon germanium; Stability; Switched capacitor circuits;
Conference_Titel :
Solid-State Circuits Conference, 1999. ESSCIRC '99. Proceedings of the 25th European
Conference_Location :
Duisburg, Germany
