RF circuits technique of dual-band transceiver IC for GSM and DCS1800 applications

This paper describes a dual band transceiver IC for small and low cost handsets applied to GSM and DCS 1800 applications. The IC fabricated in a 0.35µm SOI BiCMOS process includes a dual band receiver, transmitter, and synthesizers. The receiver contains on-chip LNAs, and low distortion mixers. The evaluation results of the LNA of GSM and DCS1800 show gain of 18.8dB, 13.5dB, NF of 1.7dB, 1.8dB, and ICP of -8.8dBm, -8.8dBm, respectively. The mixer results for GSM are gain of 9.2dB, NF of 8.9 dB and ICP of -4.5 dBm. The mixer results for DCS1800 are gain of 10.8 dB, NF of 8.7 dB and ICP of -3.8 dBm. The reference sensitivity of -107.8 dBm for GSM and -108.3 dBm for DCS 1800 were obtained.