A 1.8GHz BiCMOS RF receiver IC taking into account the cross modulation for CDMA wireless applications

Author

Ko, Beom-Kyu ; Cheon, Dong-Bin ; Kim, Seong-Wook ; Ko, Jin-Su ; Kim, Jeong-Keun ; Park, Byeong-Ha

Author_Institution

Samsung Electronics, Korea

fYear

1999

fDate

21-23 Sept. 1999

Firstpage

346

Lastpage

349

Abstract

This paper presents a 1.8GHz RF receiver chip taking into account the cross modulation inherent in CDMA mobile phones. The quantitative analysis shows the design guidelines for duplexer loss and LNA IIP3, both of which are responsible for the cross modulation. They are applied to a 1.8GHz RF chip design using 0.5µm BiCMOS technology, which includes LNA, mixer, and variable gain amplifier. The measured cascaded noise figure is 3.5dB and cascaded IIP3 is -9dBm and LNA IIP3 is +4.3dBm at 1.85GHz.

Keywords

Application specific integrated circuits; BiCMOS integrated circuits; Chip scale packaging; Gain; Guidelines; Mobile handsets; Multiaccess communication; Radio frequency; Radiofrequency amplifiers; Radiofrequency integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1999. ESSCIRC '99. Proceedings of the 25th European

Conference_Location

Duisburg, Germany

Type

conf

Filename

1471167

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=439431