Title :
A universal dual band LNA implementation in SiGe-technology for wireless applications
Author :
Catala, Stephane ; Schmidt, Axel
Author_Institution :
Infineon Technologies AG, Munich, Germany
Abstract :
A dual band low noise amplifier with matched inputs and outputs, implemented in Infineon Technologies´ B7HF SiGe process is presented. Both the single-ended inputs and outputs are matched to 50Ω without external elements. For the low band (800MHz - 1GHz) the LNA has a measured gain of 17dB and a noise figure below 1.2dB at 900MHz. The high band (1.8GHz - 2GHz) LNA achieves a gain of 15dB and a noise figure below 1.5dB at 1.9GHz. Both LNAs consume 5mA DC-current with a power supply voltage range from 2.7V to 3.6V.
Keywords :
Dual band; Gain measurement; Germanium silicon alloys; Impedance matching; Low-noise amplifiers; Noise figure; Noise measurement; Power supplies; Silicon germanium; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2000. ESSCIRC '00. Proceedings of the 26rd European
Conference_Location :
Stockholm, Sweden
