DocumentCode :
439474
Title :
A 9mW, 900-MHz CMOS LNA with 1.05dB-noise-figure
Author :
Gramegna, G. ; Magazzo, A. ; Sclafani, C ; Paparo, M. ; Erratico, P.
Author_Institution :
STMicroelectronics, Catania, Italy
fYear :
2000
fDate :
19-21 Sept. 2000
Firstpage :
73
Lastpage :
76
Abstract :
A 900-MHz CMOS Ultra-Low Noise Amplifier (LNA) has been integrated in a 0.35µm RF CMOS process with on-chip inductors. The LNA, housed in a standard TQFP48 package, features: Noise Figure NF=0.9dB with S11=-10.1dB, S22=-27dB, Power Gain Gp=14dB, input IP3=0dBm at Pdc=18mW. A NF=1.05dB is measured at Pdc=9mW. The reported LNA exhibits the best noise or power performance ever reported in CMOS technology.
Keywords :
BiCMOS integrated circuits; CMOS process; CMOS technology; Impedance matching; Inductors; Noise figure; Noise measurement; Noise reduction; Packaging; Radio frequency;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2000. ESSCIRC '00. Proceedings of the 26rd European
Conference_Location :
Stockholm, Sweden
Type :
conf
Filename :
1471216
Link To Document :
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