DocumentCode :
439500
Title :
A high-efficiency back-bias generator with cross-coupled hybrid pumping circuit for sub-1.5 V DRAM applications
Author :
Min, Kyeong-Sik ; Jin, Kyo-Won ; Kim, Ji-Beom
Author_Institution :
Hyundai Electronics Industries Co., Ltd., Cheongju-si, Korea
fYear :
2000
fDate :
19-21 Sept. 2000
Firstpage :
188
Lastpage :
191
Abstract :
Based on the study about the previously developed back-bias generators, a new high-efficiency back-bias generator with the Cross-coupled Hybrid Pumping Circuit 2 (CHPC2) is presented in this paper. CHPC2 takes only the advantages from the previous ones, throwing away the disadvantages. CHPC2 shows |VBB|/VCCas large as 98% even at low VCC=0.9 V, strongly addressing that it will be suitable at low voltage DRAM applications. Moreover, CHPC2 exhibits much better pumping efficiency and larger pumping current over the previous ones with wide RLrange at VCC=1.2 V.
Keywords :
Capacitance; Circuits; Electronics industry; Hybrid power systems; Low voltage; MOS devices; Random access memory; Subthreshold current; Switches; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2000. ESSCIRC '00. Proceedings of the 26rd European
Conference_Location :
Stockholm, Sweden
Type :
conf
Filename :
1471243
Link To Document :
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