DocumentCode
439505
Title
Split-drain MOST based circuit for measuring electric power
Author
Filho, Carlos Alberto dos Reis
Author_Institution
State University of Campinas, UNICAMP, Campinas, Brazil
fYear
2000
fDate
19-21 Sept. 2000
Firstpage
208
Lastpage
211
Abstract
An arrangement of P-channel split-drain MOS transistors is presented, which detects an applied magnetic field, whose flux density is B[Tesla], and produces an output current signal that is proportional to the product B×e, where e[Volt] is an applied voltage signal. When B and e are respectively proportional to the current and voltage on a test load, the output signal produced by the circuit is a measure of the corresponding power. The core of this circuit was fabricated in standard 0.8µm CMOS technology and 64 units of this core were connected in parallel to make up the prototype chip. Measurements of this circuit have shown that a low-cost monolithic solution for power metering is technically feasible.
Keywords
CMOS technology; Circuit testing; Current measurement; Electric variables measurement; MOSFETs; Magnetic field measurement; Power measurement; Prototypes; Semiconductor device measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2000. ESSCIRC '00. Proceedings of the 26rd European
Conference_Location
Stockholm, Sweden
Type
conf
Filename
1471248
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