• DocumentCode
    439505
  • Title

    Split-drain MOST based circuit for measuring electric power

  • Author

    Filho, Carlos Alberto dos Reis

  • Author_Institution
    State University of Campinas, UNICAMP, Campinas, Brazil
  • fYear
    2000
  • fDate
    19-21 Sept. 2000
  • Firstpage
    208
  • Lastpage
    211
  • Abstract
    An arrangement of P-channel split-drain MOS transistors is presented, which detects an applied magnetic field, whose flux density is B[Tesla], and produces an output current signal that is proportional to the product B×e, where e[Volt] is an applied voltage signal. When B and e are respectively proportional to the current and voltage on a test load, the output signal produced by the circuit is a measure of the corresponding power. The core of this circuit was fabricated in standard 0.8µm CMOS technology and 64 units of this core were connected in parallel to make up the prototype chip. Measurements of this circuit have shown that a low-cost monolithic solution for power metering is technically feasible.
  • Keywords
    CMOS technology; Circuit testing; Current measurement; Electric variables measurement; MOSFETs; Magnetic field measurement; Power measurement; Prototypes; Semiconductor device measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2000. ESSCIRC '00. Proceedings of the 26rd European
  • Conference_Location
    Stockholm, Sweden
  • Type

    conf

  • Filename
    1471248