DocumentCode
439534
Title
A new small signal modeling of RF MOSFETs including charge conservation capacitances
Author
Kwon, Ickjin ; Je, Minkyu ; Lee, Kwyro ; Shin, Hyungcheol
Author_Institution
Korea Advanced Institute of Science and Technology, Taejon, Korea
fYear
2000
fDate
19-21 Sept. 2000
Firstpage
324
Lastpage
327
Abstract
A novel extraction method of high frequency small-signal model parameters for MOSFETs is proposed. From S-parameter measurement, this technique accurately extracts the model parameters including the charge conservation capacitance parameters. To consider charge conservation, nonreciprocal capacitance is considered. The modeled parameters fit the measurements very well without any optimization. The extracted parameters also match very well with BSIM3v3 model.
Keywords
Capacitance measurement; Charge measurement; Current measurement; Electrical resistance measurement; Equivalent circuits; MOSFETs; Parameter extraction; RF signals; Radio frequency; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2000. ESSCIRC '00. Proceedings of the 26rd European
Conference_Location
Stockholm, Sweden
Type
conf
Filename
1471277
Link To Document