DocumentCode
439537
Title
5 GHz low-noise bipolar and CMOS monolithic VCO´s
Author
Jacquinot, Hélène ; Majos, Jacques ; Senn, Patrice
Author_Institution
France Telecom R&D, Meylan, France
fYear
2000
fDate
19-21 Sept. 2000
Firstpage
336
Lastpage
339
Abstract
CMOS and bipolar fully integrated VCOs for 5GHz low cost wireless applications are presented. These circuits are implemented in a 0.35µm BiCMOS SiGe process. A comparison of experimental results is carried out under fixed measurement conditions. Phase noise values at 1MHz frequency offset are -121dBc/Hz for a 4.82GHz bipolar VCO and -125dBc/Hz for a 5.46GHz CMOS VCO. To achieve the demonstration of 5GHz mixed applications using 0.35µm BiCMOS SiGe technology, 5GHz D flip-flops are designed and tested.
Keywords
BiCMOS integrated circuits; CMOS technology; Costs; Flip-flops; Frequency; Germanium silicon alloys; Integrated circuit measurements; Phase noise; Silicon germanium; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2000. ESSCIRC '00. Proceedings of the 26rd European
Conference_Location
Stockholm, Sweden
Type
conf
Filename
1471280
Link To Document