Title :
Class 1 bluetooth power amplifier with 24 dBm output power and 48% PAE at 2.4 GHz in 0.25 µm CMOS
Author :
Vathulya, V.R. ; Sowlati, T. ; Leenaerts, D.
Author_Institution :
Philips Research, Briarcliff Manor, NY, USA
Abstract :
In this paper, we report an RF power amplifier design in digital CMOS technology for the Class 1 power level specification (20 dBm) in the Bluetooth Communications standard. We have also investigated hot carrier effects under large signal RF operation of the power amplifier. The two stage circuit, designed in 0.25 µn CMOS technology, utilizes a high-density ring capacitor structure for interstage matching. In a chip-on-board configuration tested at 2.4 GHz, this CMOS power amplifier delivers an output power of 24 dBm with 48% PAE at a supply voltage of 2.5V.
Keywords :
Bluetooth; CMOS technology; Communication standards; Hot carrier effects; Operational amplifiers; Power amplifiers; Power generation; RF signals; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Solid-State Circuits Conference, 2001. ESSCIRC 2001. Proceedings of the 27th European
Conference_Location :
Villach, Austria
