DocumentCode
439817
Title
A high-speed monolithic amplifier for CRT drivers in SOI
Author
Govil, A. ; Albu, R. ; Letavic, T. ; Petruzzello, J. ; Simpson, M. ; Mukherjee, S.
Author_Institution
Philips Research USA, Briarcliff Manor, NY
fYear
2002
fDate
24-26 Sept. 2002
Firstpage
507
Lastpage
510
Abstract
An integrated power amplifier is developed for CRT drivers using a high-voltage high-speed silicon-on-insulator process technology. A measured fall-time of 4.07ns is achieved for a 44.8V change on a 10.5pF load, corresponding to a slew-rate of 8800V/µs, while maintaining a static power dissipation of less than 0.7W per channel. This represents state-of-the-art performance for CRT driver integrated circuits, and establishes thin-layer silicon-on-insulator technology as a high-voltage high-frequency mixed-mode monolithic technology.
Keywords
Cathode ray tubes; Driver circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2002. ESSCIRC 2002. Proceedings of the 28th European
Conference_Location
Florence, Italy
Type
conf
Filename
1471576
Link To Document