1 volt CMOS bluetooth front-end

A fully integrated 1V CMOS Bluetooth Front-end for low IF has been designed and measured. The front-end consists of a common-gate LNA and a passive mixer and fulfils the requirements of the Bluetooth specification 1.0B. The front-end has a maximum signal headroom in all nodes since no transistors are stacked, and no external components are needed for the input matching. The measurements show a very good correlation between different samples which indicates the robustness of the topology. The total power consumption is 2.5mW, the noise figure is 5dB, the conversion gain is 14dB, the CP1is -16dBm, and the IIP3is -5dBm. The front-end is implemented in a standard 0.25 µm-CMOS technology.